**HMC741ST89ETR: A High-Performance GaAs pHEMT MMIC Low Noise Amplifier from 17 to 24 GHz**

The **HMC741ST89ETR** represents a state-of-the-art solution for demanding low-noise amplification in the Ku- and K-band spectrum. As a **GaAs pHEMT MMIC** (Gallium Arsenide pseudomorphic High Electron Mobility Transistor Monolithic Microwave Integrated Circuit), this amplifier is engineered to deliver exceptional performance from **17 to 24 GHz**, making it an ideal choice for satellite communications, point-to-point radio, and military/radar systems.

A primary hallmark of the HMC741ST89ETR is its outstanding **low noise figure**, typically measuring just **1.8 dB**. This exceptional sensitivity ensures that weak incoming signals are amplified with minimal degradation, which is critical for maintaining the integrity and signal-to-noise ratio (SNR) of the entire receiver chain. Complementing this is a high **linearity performance**, characterized by an output IP3 (OIP3) of up to **+28 dBm**. This high linearity allows the amplifier to handle strong interfering signals without generating significant distortion, thereby preserving signal clarity.

The device provides a substantial **small-signal gain of 18 dB**, which helps to boost signals to a level where they can be effectively processed by subsequent stages in the system, such as mixers or converters. Furthermore, it supports a wide supply voltage range from **+3V to +5V**, offering designers significant flexibility in different power architectures. Its integrated design also includes on-chip bias networks and DC blocking capacitors, simplifying board layout and reducing the bill of materials for a more compact and reliable final design.

Housed in a leadless, RoHS-compliant **4x4 mm SMT package**, the HMC741ST89ETR is designed for high-volume manufacturing and is compatible with automated assembly processes. Its robust construction ensures reliable operation under rigorous environmental conditions.

**ICGOOODFIND**: The HMC741ST89ETR stands out as a superior **MMIC LNA** that masterfully balances ultra-low noise, high gain, and exceptional linearity across a wide millimeter-wave frequency band. Its highly integrated, surface-mount package makes it a cornerstone component for advancing next-generation high-frequency communication and sensor systems.

**Keywords**: Low Noise Amplifier (LNA), GaAs pHEMT, MMIC, 17-24 GHz, High Linearity