Infineon BAR50-02V Silicon Carbide Schottky Barrier Diode: Datasheet, Characteristics, and Application Notes

The relentless pursuit of higher efficiency, greater power density, and improved thermal management in power electronics has propelled wide bandgap semiconductors to the forefront. Among these, Silicon Carbide (SiC) has established itself as a cornerstone technology. The Infineon BAR50-02V is a prime example of a commercial SiC Schottky Barrier Diode (SBD) engineered to meet these demanding requirements. This article delves into its key specifications, operational characteristics, and typical applications.

Datasheet Overview and Key Specifications

The BAR50-02V is a 50mA, 200V SiC Schottky diode provided in the compact SOD-123FL surface-mount (SMD) package. Its low reverse recovery charge is its most defining feature. Unlike conventional silicon PN-junction diodes, which store significant charge during forward conduction, SiC Schottky diodes are majority carrier devices. This fundamental property means they exhibit virtually no reverse recovery current (Qrr) and associated switching losses.

Key electrical parameters from its datasheet include:

Repetitive Peak Reverse Voltage (VRRM): 200 V

Average Forward Current (IF(AV)): 50 mA at TA=100°C

Peak Forward Surge Current (IFSM): 2 A (tp=8.3ms)

Forward Voltage (VF): Typically 1.35 V at IF=50mA, TJ=25°C

Reverse Leakage Current (IR): Typically 5 µA at VR=200V, TJ=25°C

Operating Junction Temperature (TJ): -55°C to +150°C

Distinctive Characteristics and Advantages

The performance of the BAR50-02V is characterized by several critical advantages over its silicon counterparts:

1. Ultra-Fast Switching and Zero Reverse Recovery: The absence of minority carrier storage eliminates the slow and lossy reverse recovery phenomenon. This allows for significantly higher switching frequencies without a proportional increase in switching losses. Designers can use smaller passive components like inductors and capacitors, leading to more compact and lighter power systems.

2. Excellent Thermal Performance: Silicon Carbide's inherent material properties allow the device to operate efficiently at much higher junction temperatures (up to 150°C) compared to standard silicon diodes. This reduces the burden on thermal management systems.

3. Positive Temperature Coefficient: The forward voltage (VF) of a SiC Schottky diode has a positive temperature coefficient. As temperature increases, VF also increases. This characteristic promotes inherent thermal stability and simplifies the paralleling of multiple diodes for higher current capability, as it prevents thermal runaway.

4. High Reliability: The robust nature of the SiC material and the Schottky barrier design contribute to high reliability and long operational lifetime under strenuous conditions.

Application Notes and Typical Use Cases

The combination of high switching speed and high-temperature operation makes the BAR50-02V ideal for a range of high-frequency power conversion applications. Key application areas include:

Power Factor Correction (PFC) Circuits: In both boost and totem-pole PFC stages, the diode's zero reverse recovery is crucial for achieving high efficiency, especially in continuous conduction mode (CCM) designs.

Switch-Mode Power Supplies (SMPS): Used in high-frequency DC-DC converters, freewheeling diodes, and snubber circuits to reduce EMI and improve overall efficiency.

High-Frequency Inverters and Rectifiers: Essential in applications like solar inverters, motor drives, and induction heating, where fast switching is mandatory to minimize losses.

OR-ing Diodes: In redundant power systems, its low forward voltage drop and fast response make it suitable for OR-ing applications to isolate failed power sources.

When designing with the BAR50-02V, careful PCB layout is recommended to minimize parasitic inductance, which can cause voltage overshoot during the diode's extremely fast switching transitions. Adequate heatsinking must be considered for high ambient temperature environments to keep the junction temperature within safe limits.

ICGOOODFIND

The Infineon BAR50-02V exemplifies the transformative impact of SiC technology in modern power electronics. Its zero reverse recovery characteristic enables unprecedented efficiency and switching frequency, while its high-temperature operation and robust SMD package make it a superior choice for designers aiming to create smaller, cooler, and more efficient power conversion systems across industrial, automotive, and consumer applications.

Keywords:

Silicon Carbide (SiC)

Schottky Barrier Diode (SBD)

Zero Reverse Recovery

High-Frequency Switching

Power Factor Correction (PFC)