Infineon IPD50N06S4-09: High-Performance N-Channel Power MOSFET

In the realm of power electronics, the efficiency and reliability of a system are often dictated by the performance of its most fundamental components. Among these, the Power MOSFET stands as a critical workhorse, managing the flow of energy with precision. The Infineon IPD50N06S4-09 exemplifies this role, representing a superior N-channel power MOSFET engineered for demanding applications. This device is a testament to Infineon's leadership in power semiconductor technology, offering an optimal blend of low losses, high robustness, and exceptional switching performance.

Designed with advanced trench technology, the IPD50N06S4-09 is optimized for low voltage, high-speed switching operations. Its key defining characteristic is its extremely low on-state resistance (R DS(on)) of just 9.0 mΩ (max.) at 10 V. This minimal resistance is crucial as it directly translates to reduced conduction losses. When the MOSFET is switched on, less power is wasted as heat, leading to significantly higher overall system efficiency. This makes the component ideal for power management tasks where energy conservation and thermal management are paramount.

Furthermore, this MOSFET boasts a high continuous drain current (I D) rating of 50 A, coupled with a drain-to-source voltage (V DS) of 60 V. This robust current handling capability allows it to drive substantial loads in applications such as:

DC-DC converters in computing and telecom infrastructure.

Motor control circuits for industrial drives and automotive systems.

Load switching and power distribution in management systems.

Synchronous rectification in switch-mode power supplies (SMPS).

The device is also characterized by its fast switching speed, which is essential for high-frequency operation. This speed minimizes switching losses, further enhancing efficiency, especially in PWM (Pulse Width Modulation) controlled circuits. The inclusion of a logic level gate ensures it can be driven directly from modern microcontrollers and logic circuits (with a recommended 10 V gate drive), simplifying circuit design and reducing component count.

Housed in a TO-252 (DPAK) package, the IPD50N06S4-09 offers a compact footprint while providing excellent thermal performance. This package is renowned for its good power dissipation capabilities, which is vital for maintaining device reliability under high-stress conditions.

ICGOOODFIND: The Infineon IPD50N06S4-09 is a standout component that delivers high power, remarkable efficiency, and robust performance in a compact package. Its exceptional combination of low R DS(on), high current capacity, and fast switching makes it an excellent choice for designers aiming to maximize efficiency and reliability in modern power electronic systems.

Keywords: Power MOSFET, Low RDS(on), High Efficiency, Fast Switching, Logic Level